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BUK9907-40ATC trenchplus logic level fet rev. 01 28 january 2002 product data m3d745 1. description n-channel enhancement mode ?eld-effect power transistor in a plastic package using trenchmos? technology, featuring very low on-state resistance and trenchplus diodes for clamping, electrostatic discharge (esd) protection and temperature sensing. product availability: BUK9907-40ATC in sot263b. 2. features n typical on-state resistance 5.8 m w n q101 compliant n esd and overvoltage protection n monolithically integrated temperature sensor for overload protection. 3. applications n automotive and power switching: u 12 v and 24 v high power motor drives (e.g. electrical power assisted steering (epas)) u protected drive for lamps. 4. pinning information table 1: pinning - sot263b simpli?ed outline and symbol pin description simpli?ed outline symbol 1 gate (g) sot263b 2 anode (a) 3 drain (d) 4 cathode (k) 5 source (s) mb mounting base; connected to drain (d) 15 mb mbl263 mbl306 da sk g
philips semiconductors BUK9907-40ATC trenchplus logic level fet product data rev. 01 28 january 2002 2 of 15 9397 750 09139 ? koninklijke philips electronics n.v. 2002. all rights reserved. 5. quick reference data table 2: quick reference data symbol parameter conditions typ max unit v dsr(cl) drain-source clamping voltage t j =25 c; i gs(cl) = - 2 ma; i d =1a 50 - v i d drain current (dc) t mb =25 c; v gs = 5 v - 140 a p tot total power dissipation t mb =25 c - 272 w t j junction temperature - 175 c r dson drain-source on-state resistance t j =25 c; v gs =5v; i d =50a 5.8 7 m w t j =25 c; v gs = 4.5 v; i d =50a 6 7.7 m w t j =25 c; v gs = 10 v; i d = 50 a 5.2 6.2 m w v f temperature sense diode forward voltage t j =25 c; i f = 250 m a 658 668 mv s f temperature sense diode temperature coef?cient - 55 c philips semiconductors BUK9907-40ATC trenchplus logic level fet product data rev. 01 28 january 2002 3 of 15 9397 750 09139 ? koninklijke philips electronics n.v. 2002. all rights reserved. 6. limiting values [1] voltage is limited by clamping [2] current is limited by power dissipation chip rating [3] continuous current is limited by package. table 3: limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage (dc) [1] -40v v dgs drain-gate voltage (dc) i dg = 250 m a [1] -40v v gs gate-source voltage (dc) [1] - 15 v i d drain current (dc) t mb =25 c; v gs =5v; figure 2 and 3 [2] - 140 a [3] -75a t mb = 100 c; v gs =5v; figure 2 [3] -75a i dm drain current (peak value) t mb =25 c; pulsed; t p 10 m s; figure 3 - 560 a p tot total power dissipation t mb =25 c; figure 1 - 272 w i dg(cl) drain-gate clamping current t p = 5 ms; d = 0.01 - 50 ma i gs(cl) gate-source clamping current continuous - 10 ma t p = 5 ms; d = 0.01 - 50 ma v isol(fet-tsd) fet to temperature sense diode isolation voltage - 100 v t stg storage temperature - 55 +175 c t j operating junction temperature - 55 +175 c source-drain diode i dr reverse drain current (dc) t mb =25 c [2] - 140 a [3] -75a i drm pulsed reverse drain current t mb =25 c; pulsed; t p 10 m s - 560 a clamping e ds(cl)s non-repetitive drain-source clamping energy unclamped inductive load; i d =75a; v ds 40 v; v gs =5v; r gs =10k w ; starting t j =25 c - 1.4 j electrostatic discharge v esd electrostatic discharge voltage; pins 1,3,5 human body model; c = 100 pf; r = 1.5 k w -6kv
philips semiconductors BUK9907-40ATC trenchplus logic level fet product data rev. 01 28 january 2002 4 of 15 9397 750 09139 ? koninklijke philips electronics n.v. 2002. all rights reserved. v gs 3 5v fig 1. normalized total power dissipation as a function of mounting base temperature. fig 2. continuous drain current as a function of mounting base temperature. t mb =25 c; i dm single pulse. fig 3. safe operating area; continuous and peak drain currents as a function of drain-source voltage. 03na19 0 20 40 60 80 100 120 0 25 50 75 100 125 150 175 200 p der (%) t mb (oc) 03ne74 0 25 50 75 100 125 150 25 50 75 100 125 150 175 200 t mb ( o c) i d (a) capped at 75 a due to package p der p tot p tot 25 c () ----------------------- 100 % = 03ne75 1 10 10 2 10 3 1 10 10 2 v ds (v) i d (a) dc 100 ms 10 ms r dson = v ds /i d 1 ms t p = 10 s 100 s capped at 75 a due to package
philips semiconductors BUK9907-40ATC trenchplus logic level fet product data rev. 01 28 january 2002 5 of 15 9397 750 09139 ? koninklijke philips electronics n.v. 2002. all rights reserved. 7. thermal characteristics 7.1 transient thermal impedance table 4: thermal characteristics symbol parameter conditions min typ max unit r th(j-a) thermal resistance from junction to ambient vertical in still air - - 60 k/w r th(j-mb) thermal resistance from junction to mounting base figure 4 - - 0.55 k/w fig 4. transient thermal impedance from junction to mounting base as a function of pulse duration. 03ne76 single shot 0.2 0.1 0.05 0.02 10 -3 10 -2 10 -1 1 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 1 10 t p (s) z th(j-mb) (k/w) d = 0.5 t p t p t p t t d =
philips semiconductors BUK9907-40ATC trenchplus logic level fet product data rev. 01 28 january 2002 6 of 15 9397 750 09139 ? koninklijke philips electronics n.v. 2002. all rights reserved. 8. characteristics table 5: characteristics t j =25 c unless otherwise speci?ed symbol parameter conditions min typ max unit static characteristics v (br)dg drain-gate zener breakdown voltage i d = 0.25 ma; v gs =0v 40 - - v t j = - 55 c40--v v gs(th) gate-source threshold voltage i d = 1 ma; v ds =v gs ; figure 9 1 1.5 2 v t j = 175 c 0.5 - - v t j = - 55 c - - 2.3 v i dss drain-source leakage current v ds = 40 v; v gs =0v - 0.1 100 m a t j = 175 c - - 250 m a v (br)gss gate-source breakdown voltage i g = 1 ma; - 55 c philips semiconductors BUK9907-40ATC trenchplus logic level fet product data rev. 01 28 january 2002 7 of 15 9397 750 09139 ? koninklijke philips electronics n.v. 2002. all rights reserved. source-drain diode v sd source-drain (diode forward) voltage i s = 25 a; v gs =0v; figure 19 - 0.85 1.2 v t rr reverse recovery time i s =20a;di s /dt = - 100 a/ m s v gs = - 10 v; v ds =30v -85-ns q r recovered charge - 250 - nc table 5: characteristics continued t j =25 c unless otherwise speci?ed symbol parameter conditions min typ max unit
philips semiconductors BUK9907-40ATC trenchplus logic level fet product data rev. 01 28 january 2002 8 of 15 9397 750 09139 ? koninklijke philips electronics n.v. 2002. all rights reserved. t j =25 c; t p = 300 m st j =25 c; i d =50a fig 5. output characteristics: drain current as a function of drain-source voltage; typical values. fig 6. drain-source on-state resistance as a function of gate-source voltage; typical values. t j =25 c; t p = 300 m s fig 7. drain-source on-state resistance as a function of drain current; typical values. fig 8. normalized drain-source on-state resistance factor as a function of junction temperature. 03ne77 0 50 100 150 200 250 300 350 400 0246810 v ds (v) i d (a) 2.2 2.6 3 3.4 3.8 4.2 4.6 v gs = 5 v 6 10 2.4 2.8 3.2 3.6 4 4.4 03ne79 0 5 10 15 20 25 246810 v gs (v) r dson (m w ) 03ne78 6 8 10 12 14 16 0 50 100 150 200 250 300 i d (a) r dson (m w ) v gs = 3 v 3.2 3.4 3.6 3.8 4 5 10 03ne89 0 0.5 1 1.5 2 -60 0 60 120 180 t j (oc) a a r dson r dson 25 c () ---------------------------- - =
philips semiconductors BUK9907-40ATC trenchplus logic level fet product data rev. 01 28 january 2002 9 of 15 9397 750 09139 ? koninklijke philips electronics n.v. 2002. all rights reserved. i d = 1 ma; v ds =v gs t j =25 c; v ds =v gs fig 9. gate-source threshold voltage as a function of junction temperature. fig 10. sub-threshold drain current as a function of gate-source voltage. t j =25 c; v ds =25v v gs = 0 v; f = 1 mhz fig 11. forward transconductance as a function of drain current; typical values. fig 12. input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. 03na17 0 0.5 1 1.5 2 2.5 -60 -20 20 60 100 140 180 max typ min v gs(th) t j ( o c) (v) 03na18 0 0.5 1 1.5 2 2.5 3 max typ min i d v gs (v) 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 (a) 03ne81 0 20 40 60 80 100 120 140 0 20406080100 i d (a) g fs (s) 03ne86 0 2000 4000 6000 8000 10000 12000 14000 16000 10 -2 10 -1 1 10 10 2 v ds (v) c (pf) c iss c oss c rss
philips semiconductors BUK9907-40ATC trenchplus logic level fet product data rev. 01 28 january 2002 10 of 15 9397 750 09139 ? koninklijke philips electronics n.v. 2002. all rights reserved. v ds =25v t j =25 c; i d =50a fig 13. transfer characteristics: drain current as a function of gate-source voltage; typical values. fig 14. gate-source voltage as a function of turn-on gate charge; typical values. i dg(cl) = - 2ma i d =10a fig 15. drain-source clamping voltage as a function of drain current; typical values. fig 16. drain-source clamping voltage as a function of gate current; typical values. 03ne80 0 20 40 60 80 100 0.0 1.0 2.0 3.0 v gs (v) i d (a) t j = 175 oc t j =25oc 03ne87 0 1 2 3 4 5 0 20 40 60 80 100 120 q g (nc) v gs (v) v ds = 14 v v ds = 35 v 03ne82 48.5 49 49.5 50 50.5 51 0246810 i d (a) v dsr(cl) (v) t j = 175 oc t j = 25 oc t j = -55 oc 03ne83 40 42 44 46 48 50 52 54 0123 -i gs(cl) (ma) v dsr(cl) (v) t j = 175 oc t j = 25 oc t j = -55 oc
philips semiconductors BUK9907-40ATC trenchplus logic level fet product data rev. 01 28 january 2002 11 of 15 9397 750 09139 ? koninklijke philips electronics n.v. 2002. all rights reserved. i f = 250 m av f at t j =25 c; i f = 250 m a fig 17. forward voltage of temperature sense diode as a function of junction temperature; typical values. fig 18. temperature coef?cient of temperature sense diode as a function of forward voltage; typical values. v gs =0v fig 19. reverse diode current as a function of reverse diode voltage; typical values. 03ne84 400 500 600 700 0 50 100 150 200 t j (oc) v f (mv) 03ne85 1.40 1.45 1.50 1.55 1.60 1.65 1.70 645 650 655 660 665 670 675 v f (mv) -s f (mv/k) max min typ 03ne88 0 20 40 60 80 100 0.0 0.5 1.0 1.5 v sd (v) i s (a) t j = 175 oc t j = 25 oc
philips semiconductors BUK9907-40ATC trenchplus logic level fet product data rev. 01 28 january 2002 12 of 15 9397 750 09139 ? koninklijke philips electronics n.v. 2002. all rights reserved. 9. package outline fig 20. sot263b. references outline version european projection issue date iec jedec eiaj sot263b 5-lead to-220 d d 1 q ? p p 1 l 15 l 1 mounting base l 2 m e q b 0 5 10 mm scale plastic single-ended package; heatsink mounted; 1 mounting hole; 5-lead to-220 sot263b dimensions (mm are the original dimensions) a e a 1 c notes 1. terminal dimensions are uncontrolled in this zone. 2. positional accuracy of the terminals is controlled in this zone. w m unit a 1 d 1 e p 1 mm 1.7 qq a b d c l 2 (2) 0.5 4.3 4.1 ? p 3.8 3.6 m 0.8 0.6 15.0 13.5 2.4 1.6 3.0 2.7 2.6 2.2 w 0.4 0.7 0.4 15.8 15.2 0.85 0.70 4.5 4.1 1.39 1.27 6.4 5.9 10.3 9.7 l 1 (1) e l 01-01-11
philips semiconductors BUK9907-40ATC trenchplus logic level fet product data rev. 01 28 january 2002 13 of 15 9397 750 09139 ? koninklijke philips electronics n.v. 2002. all rights reserved. 10. revision history table 6: revision history rev date cpcn description 01 20020128 - product data; initial version
9397 750 09139 philips semiconductors BUK9907-40ATC trenchplus logic level fet ? koninklijke philips electronics n.v. 2002. all rights reserved. product data rev. 01 28 january 2002 14 of 15 9397 750 09139 philips semiconductors BUK9907-40ATC trenchplus logic level fet ? koninklijke philips electronics n.v. 2002. all rights reserved. product data rev. 01 28 january 2002 14 of 15 contact information for additional information, please visit http://www.semiconductors.philips.com . for sales of?ce addresses, send e-mail to: sales.addresses@www.semiconductors.philips.com . fax: +31 40 27 24825 11. data sheet status [1] please consult the most recently issued data sheet before initiating or completing a design. [2] the product status of the device(s) described in this data sheet may have changed since this data sheet was published. the l atest information is available on the internet at url http://www.semiconductors.philips.com. 12. de?nitions short-form speci?cation the data in a short-form speci?cation is extracted from a full data sheet with the same type number and title. for detailed information see the relevant data sheet or data handbook. limiting values de?nition limiting values given are in accordance with the absolute maximum rating system (iec 60134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information applications that are described herein for any of these products are for illustrative purposes only. philips semiconductors make no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. 13. disclaimers life support these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips semiconductors for any damages resulting from such application. right to make changes philips semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. philips semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise speci?ed. 14. trademarks trenchmos is a trademark of koninklijke philips electronics n.v. data sheet status [1] product status [2] de?nition objective data development this data sheet contains data from the objective speci?cation for product development. philips semiconductors reserves the right to change the speci?cation in any manner without notice. preliminary data quali?cation this data sheet contains data from the preliminary speci?cation. supplementary data will be publish ed at a later date. philips semiconductors reserves the right to change the speci?cation without notice, in order to improve the design and supply the best possible product. product data production this data sheet contains data from the product speci?cation. philips semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. changes will be communicated according to the customer product/process change noti?cation (cpcn) procedure snw-sq-650a.
? koninklijke philips electronics n.v. 2002. printed in the netherlands all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. date of release: 28 january 2002 document order number: 9397 750 09139 contents philips semiconductors BUK9907-40ATC trenchplus logic level fet 1 description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 4 pinning information . . . . . . . . . . . . . . . . . . . . . . 1 5 quick reference data . . . . . . . . . . . . . . . . . . . . . 2 6 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 thermal characteristics. . . . . . . . . . . . . . . . . . . 5 7.1 transient thermal impedance . . . . . . . . . . . . . . 5 8 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 9 package outline . . . . . . . . . . . . . . . . . . . . . . . . 12 10 revision history . . . . . . . . . . . . . . . . . . . . . . . . 13 11 data sheet status . . . . . . . . . . . . . . . . . . . . . . . 14 12 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 13 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 14 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

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